High Resolution Laplace Deep Level Transient Spectroscopy a New Tool to Study Implant Damage in Silicon

Several recent studies indicate that there are major differences in the defect population between ion implanted and electron damaged silicon. The differences are more marked as the ion mass and the implant energy increase. This paper reviews work that has been done using high resolution (Laplace) Deep Level Transient Spectroscopy (DLTS) to try to understand the differences between the defect species and their evolution during annealing. It is evident that the peak seen in conventional DLTS at about 240K contains contributions from a range of complexes not observed in electron irradiated material. This and the structure of commonly observed defects revealed by uniaxial stress used in conjunction with LDLTS is discussed together with the role of hydrogen in implantation defect studies.